Plenary Speakers
Tony Renau, Varian Semiconductor Equipment (retired)
Development of Ion Implantation Technology: 1987-2022
Fred Roozeboom, University of Twente
Technical Developments of Thermal Annealing in the Past Sixty Years, and Future Perspectives
Hitoshi Wakabayashi, Tokyo Institute of Technology
Novel Processes and Devices including 2D Materials
Invited Speakers
Temel Buyuklimanli, EAG Laboratories
Overview of Implantation Metrology
Oleg Gluschenkov, IBM Research
Laser Annealing Applications for Advanced FinFETs and Beyond
Lubek Jastrzebski, Semilab
DPLI (Defect Photoluminescence Imaging) to Monitor Defect Formation During Ion Implantation and Annealing
Jacob Jensen, Intel Corporation
Flash Annealing
Sébastien Kerdiles, CEA-LETI
More Than Moore Applications of Nanosecond Laser Annealing
Tsunenobu Kimoto, Kyoto University
SiC Implant and Anneal
Didier Landru, Soitec
Smart Cut, FD-SOI and Integration Challenges
Alexander Scheit, IHP Solutions GmbH
Flash Annealing for the Worldwide Fastest SiGe HBT
Kyoichi Suguro, SUGSOL Corporation
Where is the annealing technology going for better device performance?
Toshiyuki Tabata, Laser Systems & Solutions of Europe
Activation of Dopants in Si/SiGe using Laser Annealing
Hao Yu, imec
Advanced Contacts for CMOS